Defects in GaInAsBi Epitaxial Films on Si(001) Substrates

被引：0
|
作者：
Pashchenko, A. S. [1 ,2 ]
Devitsky, O. V. [1 ,2 ]
Lunina, M. L. [1 ]
机构：
[1] Russian Acad Sci, Fed Res Ctr, Southern Sci Ctr, Rostov Na Donu 344006, Russia
[2] North Caucasian Fed Univ, Stavropol 355009, Russia
来源：
SEMICONDUCTORS | 2024年 / 58卷 / 04期
关键词：
III-V compounds; highly mismatched alloys; pulsed laser deposition; GaInAsBi; silicon; SEMICONDUCTORS; GROWTH;
D O I：
10.1134/S1063782624040110
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer-Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 & Aring;. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.
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页码：339 / 344
页数：6
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