Lateral photoconductivity of InAs/GaAs quantum dots for 1.5 μm-wavelength excitation photoconductive terahertz antenna devices

被引：0

作者：

Kaizu, Toshiyuki ^{[1
,4
]}

Kojima, Osamu ^{[1
,5
]}

Minami, Yasuo ^{[2
,6
]}

Kitada, Takahiro ^{[2
,7
]}

Harada, Yukihiro ^{[1
]}

Kita, Takashi ^{[1
]}

Wada, Osamu ^{[3
]}

机构：

[1] Kobe Univ, Grad Sch Engn, 1-1 Rokkodai, Kobe 6578501, Japan

[2] Tokushima Univ, Grad Sch Technol Ind & Social Sci, 2-1 Minamijosanjima, Tokushima 7708506, Japan

[3] Kobe Univ, Off Acad & Ind Innovat Oacis, 1-1 Rokkodai, Kobe 6578501, Japan

[4] Kyoto Univ, Ctr Promot Interdisciplinary Educ & Res, Nanotechnol Hub, Sakyo ku, Kyoto 6068501, Japan

[5] Chiba Inst Technol, Dept Elect & Elect Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan

[6] Nihon Univ, Coll Ind Technol, 1-2-1 Izumi Cho, Narashino, Chiba 2758575, Japan

[7] Natl Inst Technol Matsue Coll, 14-4 Nishi Ikumacho, Matsue, Shimane 6908518, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 08期

关键词：

quantum dot; lateral photoconductivity; telecom wavelength; terahertz antenna; HIGH-FIELD TRANSPORT; GAAS; GENERATION;

D O I：

10.35848/1347-4065/ad6543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report lateral photoconductive properties of multilayer-stacked undoped InAs/GaAs quantum dots (QDs) for the application of photoconductive terahertz (THz) antenna devices that operate in a 1.5 mu m-telecom-wavelength band. The excitation power-dependent photocurrent showed a high value without saturation under high excitation power for the excitation wavelength of 1460 nm. From the reflection pump-probe signal, a fast photocarrier lifetime was derived. These results, together with the low dark current characteristic, support the applicability of the multilayer-stacked undoped InAs/GaAs QDs to photoconductive THz antennas operating in a 1.5 mu m-wavelength band.

引用

页数：5

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