Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations

被引:104
|
作者
Luo, Tengfei [1 ]
Garg, Jivtesh [2 ]
Shiomi, Junichiro [3 ]
Esfarjani, Keivan [2 ]
Chen, Gang [2 ]
机构
[1] Univ Notre Dame, Notre Dame, IN 46556 USA
[2] MIT, Cambridge, MA 02139 USA
[3] Univ Tokyo, Tokyo 1138656, Japan
关键词
SCATTERING;
D O I
10.1209/0295-5075/101/16001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from a dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated using Fermi's Golden rule. The calculated GaAs thermal conductivity agrees well with experimental data. Thermal conductivity accumulations as a function of the phonon mean free path and as a function of the wavelength are obtained. Our results predict a significant size effect on the GaAs thermal conductivity in the nanoscale. Relaxation times of optical phonons and their contributions from different scattering channels are also studied. Such information will help the understanding of hot phonon effects in GaAs-based devices. Copyright (C) EPLA, 2013
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页数:6
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