Effect of capping rate on the performance of InAs/GaAs quantum dot solar cell

被引：0

作者：

Rai, Anjali ^{[1
]}

机构：

[1] Indian Sch Mines, Indian Inst Technol, Dept Elect Engg, Dhanbad, India

来源：

PHYSICA SCRIPTA | 2024年 / 99卷 / 08期

关键词：

InAs QDs; GaAs capping; growth rate; absorption spectra; spectral response; photocurrent density; EFFICIENCY; NANOSTRUCTURES; GROWTH; LAYER;

D O I：

10.1088/1402-4896/ad5fc5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The GaAs capping layer significantly influences the structural and optoelectronic characteristics of the InAs quantum dot (QD). The capping rate modifies the essential parameters, such as size, shape, and composition, that determine the optical properties of the QDs. In this work, we present a theoretical model to study the effects of the capping rate on the absorption spectra of InAs dots embedded in the GaAs capping layer. The proposed model can be used for optimizing the structural and optical characteristics of InAs/GaAs QDs without using an annealing procedure or any capping material other than GaAs. In addition, the impact of three different GaAs capping layer growth rates on the performance of quantum dot solar cells is evaluated.

引用

页数：10

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