Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications

This paper reports the design of ferroelectric nanowires using HfO2 and Al2O3. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al2O3- and HfO2-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has I-ON = 3.8 x 10(-5) using HfO2 and I-ON = 3.48 x 10(-4 )using Al2O3. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.