Phonon-drag thermopower in GaAs/AlGaAs quantum wells

被引:0
|
作者
Babayev, M. M. [1 ]
Mehdyev, B. H. [1 ,2 ]
Sultanova, Kh. B. [1 ]
机构
[1] Minist Sci & Educ, Inst Phys, Baku, Azerbaijan
[2] Baku State Univ, Inst Phys Problems, Baku, Azerbaijan
来源
EUROPEAN PHYSICAL JOURNAL B | 2024年 / 97卷 / 10期
关键词
THERMOELECTRIC PROPERTIES;
D O I
10.1140/epjb/s10051-024-00790-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Thermopower in a semiconductor quantum well with the modified P & ouml;schl-Teller confining potential is calculated, taking into account the drag of electrons by phonons. Based on the obtained theoretical results, the temperature dependence of thermopower in a GaAs/AlxGa1-xAs\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\text{GaAs}/{\text{Al}}_{x}{\text{Ga}}_{1-x}As$$\end{document} quantum well at low temperatures has been studied. Numerical calculations show that our theoretical results are in good agreement with experimental ones. This indicates that the modified P & ouml;schl-Teller potential describes well the confinement potential in semiconductor quantum wells.
引用
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页数:5
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