Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

被引:0
|
作者
Robson, Max E. [1 ,2 ]
Johnson, Andrew L. [1 ]
机构
[1] Univ Bath, Dept Chem, Claverton Down, Bath BA2 7AY, England
[2] Univ Bristol, Ctr Doctoral Training Aerosol Sci, Sch Chem, Cantocks Close, Bristol BS8 1TS, England
基金
英国工程与自然科学研究理事会;
关键词
CHEMICAL-VAPOR-DEPOSITION; RAY CRYSTAL-STRUCTURES; SULFIDE THIN-FILMS; OPTICAL-PROPERTIES; METAL-COMPLEXES; CDS; NANOSTRUCTURES; GROWTH; POLYMER; CVD;
D O I
10.1039/d4dt01278j
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A series of zinc(ii) thioamidate complexes [Zn{SC(iPr)NR}2]n for R = iPr (n = 2) (2), tBu (3) (n = 1), Ph (4) (n = 2) and Cy (5) (n = 2) and one cadmium(ii) thioamidate complex [Cd{SC(iPr)NtBu}2]3, (6), were designed and synthesised as single-source precursors for AACVD ZnS and CdS. Solid-state structures of all four zinc(ii) compounds revealed distorted tetrahedral or trigonal bipyramidal geometries, with varying tendencies for dimeric association, mediated by {Zn-S} bridging bonds. The thermogravimetric analysis identified the {tBu} derivertive, 3, as the most promising precursor based on its low decomposition onset (118 degrees C) and clean conversion to ZnS. This was attributed to the greater availability of beta-hydrogen atoms promoting the pyrolysis mechanism. The corresponding cadmium thioamide 6 was found to crystallise as a trimetallic molecule which lacked the thermal stability to be considered viable for AACVD. Hence, 3 was used to deposit ZnS thin films by AACVD at 200-300 degrees C. Powder X-ray diffraction confirmed phase-pure growth of hexagonal wurtzite ZnS, with approximate crystallite sizes of 15-20 nm. Scanning electron microscopy revealed densely packed spherical nanoclusters. The morphology and crystallinity were most consistent for depositions between 250-300 degrees C. Energy dispersive X-ray spectroscopy indicated slightly sulfur-deficient stoichiometries. A series of zinc and cadmium thioamidate complexes have been synthesised, characterised and their thermal properties assessed for their potential application in the AACVD of metal sulfide thin films.
引用
收藏
页码:11380 / 11392
页数:13
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