Mesoscale Ordering 3D Mosaic Self-Assembly of Dopant-Free Hole Transport Material for Perovskite Solar Cells

被引:6
|
作者
Liu, Xiaoyuan [1 ]
Wang, Keli [1 ]
Li, Yuheng [2 ]
You, Shuai [2 ]
Liu, Tuo [1 ]
Lv, Yifan [3 ,4 ]
Li, Yuan [5 ]
Wang, Yu [1 ]
He, Haoxiang [1 ]
Li, Yinxin [1 ]
Chen, Qian [1 ]
Xie, Pengfei [1 ]
Chen, Yonghua [3 ,4 ]
Li, Xiong [2 ]
Xu, Zong-Xiang [1 ]
机构
[1] Southern Univ Sci & Technol, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
[2] Huazhong Univ Sci & Technol, Michael Gra?tzel Ctr Mesoscop Solar Cells, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[3] Nanjing Tech Univ NanjingTech, Key Lab Flexible Elect KLOFE, Nanjing 211816, Peoples R China
[4] Nanjing Tech Univ NanjingTech, Inst Adv Mat IAM, Sch Flexible Elect Future Technol, Nanjing 211816, Jiangsu, Peoples R China
[5] Shandong Univ, Sch Informat Sci & Engn, Qingdao 266237, Peoples R China
来源
ACS ENERGY LETTERS | 2024年 / 9卷 / 05期
基金
中国国家自然科学基金;
关键词
LOW-COST; EFFICIENT;
D O I
10.1021/acsenergylett.4c00585
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To enhance n-i-p perovskite solar cell (PSC) performance, we optimized the hole transport material (HTM) by using a cost-effective N,N '-bicarbazole-based molecule, BCzSPA, with a 3D conjugated extended "L"-type configuration, to fix the molecular packing model and charge hopping channel. By implementing mesoscale molecular tailoring strategies to order the molecular stacking of BCzSPA, we have significantly realized a dense 3D mosaic self-assembly with intermolecular coupling and multichannel charge hopping properties. The proper incorporation of heteroatom-promoted multidirectional molecular interactions and enhanced morphological stability has simultaneously optimized the perovskite/HTM interfacial contact, inhibited defect formation, and further suppressed charge recombination loss. As a result, the resulting PSCs have achieved a promising efficiency of 25.42% (certified PCE, 24.53%) for a small-area (0.1 cm(2)) device as well as 24.01% for a large-area (1 cm(2)) device, while demonstrating remarkable stabilities, with T-80 lifetimes exceeding 2400 h under operation or thermal aging at 85 degrees C.
引用
收藏
页码:2446 / 2455
页数:10
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