A Solid-State Pulsed Power Generator With Chip-on-Board Packaging SiC-Based Switching Module

被引:0
|
作者
Li, Diangeng [1 ]
Zhang, Zicheng [2 ]
Gao, Jingming [2 ]
Sun, Yijie [1 ]
He, Juntao [2 ]
机构
[1] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, State Key Lab Pulsed Power Laser Technol, Changsha 410073, Peoples R China
关键词
Blumlein pulse forming network (BPFN); chip-on-board (COB); pulsed power; silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET); PLASMA;
D O I
10.1109/TPS.2024.3455573
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The solid-state pulsed power generators (PPGs) are widely used in various modern industrial applications for their high repetition rate and long lifetime. The output characteristics of the generators are significantly affected by the dynamic characteristics of the semiconductor switches. Wide bandgap (WBG) semiconductor power devices, such as silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), have the potential to structure solid-state PPGs due to many advantages, such as a high rated voltage, low on-resistance, high operational temperature, and fast switching speed. Typically, these devices are used in series/parallel connections to enhance the power level of the generators. However, this approach often leads to increased parasitic inductance of the switching modules, which results in flattened rising edges of the output pulse and reduced power transmission efficiency. The chip-on-board (COB) packaging method exhibits excellent high-frequency performance by allowing current paths to be more flexible, which is suitable for constructing the power module. This article proposes a solid-state PPG with Blumlein pulse forming network (BPFN) and COB packaging SiC-based switching module. The switching module is based on a four-layer printed circuit board (PCB). SiC MOSFET bare dies, gate drivers, and auxiliary elements are directly soldered on the top layer of the PCB. Separate conducting layers are connected to the terminals of the switching module by vias, which provides extra flexibility in designing and enables the stray inductance of the power loop to be minimized to 5.14 nH by optimizing the current communication loops. A 5-kV prototype of the solid-state PPG is fabricated based on the designed switching module. Under a resistive load of 2.8 $\Omega$ , a quasi-square pulse with a 62-ns pulsewidth and a 45-ns rise time can be obtained. Additionally, this generator has been tested at a 500-Hz repetition rate in the burst mode, and the di/dt of the switching module is about 80 A/ns, proving the effectiveness of the solid-state PPG.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] A high-power nanosecond pulse generator based on solid-state switches
    Kladukhin, V. V.
    Kladukhin, S. V.
    Novoselov, A. A.
    Khramtsov, S. P.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2013, 56 (03) : 294 - 298
  • [22] A high-power nanosecond pulse generator based on solid-state switches
    V. V. Kladukhin
    S. V. Kladukhin
    A. A. Novoselov
    S. P. Khramtsov
    Instruments and Experimental Techniques, 2013, 56 : 294 - 298
  • [23] Packaging of integrated solid-state power assembly cells: A thermomechanics-based approach
    Shaw, MC
    Beihoff, BC
    PROCEEDINGS OF THE IEEE, 2001, 89 (06) : 856 - 863
  • [24] Solid-state SOS-based generator providing a peak power of 4 GW
    Bushlyakov, Alexei I.
    Lyubutin, Sergei K.
    Ponomarev, Andrey V.
    Rukin, Sergei N.
    Slovikovsky, Boris G.
    Timoshenkov, Sergei P.
    Tsyranov, Sergei N.
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2006, 34 (05) : 1873 - 1878
  • [25] A 100 GW, 100 ps solid-state pulsed power system based on semiconductor opening switch generator and magnetic compression lines
    Patrakov, V. E.
    Pedos, M. S.
    Ponomarev, A. V.
    Rukin, S. N.
    Timoshenkov, S. P.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2024, 95 (08):
  • [26] A 30 GW subnanosecond solid-state pulsed power system based on generator with semiconductor opening switch and gyromagnetic nonlinear transmission lines
    Gusev, A., I
    Pedos, M. S.
    Ponomarev, A., V
    Rukin, S. N.
    Timoshenkov, S. P.
    Tsyranov, S. N.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2018, 89 (09):
  • [27] High-speed high-voltage solid-state Marx generator based on SiC MOSFETs
    Dehghan, S. Mohammad
    Seviour, Rebecca
    Hunt, Steve
    IET POWER ELECTRONICS, 2023, 16 (06) : 917 - 927
  • [28] Robust Design of a Solid-State Pulsed Power Modulator Based on Modular Stacking Structure
    Ahn, Suk-Ho
    Ryoo, Hong-Je
    Gong, Ji-Woong
    Jang, Sung-Roc
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (05) : 2570 - 2577
  • [29] Output voltage adjustment of a pulsed high-voltage nanosecond generator with inductive energy storage and a solid-state switching system
    Korzhenevskiy, S. R.
    Komarskiy, A. A.
    Chepusov, A. S.
    Bessonova, V. A.
    Titov, V. N.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2017, 60 (01) : 46 - 49
  • [30] Output voltage adjustment of a pulsed high-voltage nanosecond generator with inductive energy storage and a solid-state switching system
    S. R. Korzhenevskiy
    A. A. Komarskiy
    A. S. Chepusov
    V. A. Bessonova
    V. N. Titov
    Instruments and Experimental Techniques, 2017, 60 : 46 - 49