Use of plasma process diagnostic sensors for the monitoring of in situ dry cleaning of plasma enhanced chemical vapor deposition chamber

A potential source of particle contamination due to poorly maintained PECVD chamber condition forces to perform in situ dry cleaning also actively employed before the wet-cleaning chamber maintenance period. In this paper, we demonstrate the use of plasma process diagnostic sensors, optical emission spectroscope, and quadrupole mass spectrometer for in situ plasma monitoring of the dry-cleaning step. It is worthwhile to know the thin film residue on the chamber's inner wall, but it is difficult to collect the deposited thin film sample from the wall since the preparation of the sample from the equipment is impossible. To alleviate the concern, we prepared silicon wafer samples mounted on the chamber sidewall over the prolonged exposure of the SiO(2 )deposition process, and the collected sensory data were investigated under the dry-cleaning condition. The residue film obtained through the experiment was characterized by Fourier transform infrared, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. We found a useful insight into the chamber dry-cleaning end point detection application through residual gas analysis, and the results contribute to process engineers setting up the in situ dry-cleaning recipe to make sure that subsequent deposition can be consistently maintained.