Electronic and hole mobilities in wide band-gap monolayer tungsten carbide

Using a rigorous ab-initio many body perturbation theory, we demonstrate here that a novel tungsten carbide (WC) in its two-dimensional (2D) hexagonal (h) structure posses a strong electron-phonon correlation. 2D h-WC is an indirect semiconductor and has a large band-gap (similar to 1.10 eV) and spinorbit splitting. We show that due to this strong interaction, a significant self-energy correction appears at various cryogenic and room temperatures. This leads to a strong intra- and interband scattering rates suppressing the electronic and hole mobility around 56 and 9 cm(2)V(-1)s(-1) at room temperature.