A 1-27 GHz SiGe Low Noise Amplifier With 27-dB Peak Gain and 2.85 ± 1.45 dB NF

This brief presents an ultra-wideband (UWB) low-noise amplifier (LNA) with a 3-dB gain bandwidth (BW) from 1 to 27 GHz (185.7% fractional BW). The resistive-feedback and inductive-peaking techniques are employed to enlarge the bandwidth. Moreover, the inductive-degeneration technique and pi -matching network are utilized to realize a wideband noise and input impedance matching simultaneously. The LNA is fabricated in a 0.13-mu m SiGe BiCMOS technology. It achieves a peak gain of 27 dB and a minimum noise figure (NF) of 1.4 dB at room temperature. The output-referred 1-dB compression point (OP1dB) is greater than 6.5 dBm over the entire 3-dB gain BW. The S (11) is below -10 dB from 1.8 to 24 GHz and S- 22 is below -10 dB from 1.8 to 30 GHz. In addition, the performance comparison at different temperatures indicates that the LNA can operate correctly from -40 to 100 degrees C without any adjustments, and the variations in gain and NF are less than 3 dB from 1 to 27 GHz and 2 dB from 2.5 to 27 GHz to 27 GHz respectively. The LNA occupies an area of 0.9x 0.8mm(2) with a core area of 0.64x 0.42 mm(2).