A Passive Balancing Method for Dynamic Current Sharing of Paralleled SiC MOSFETs with Kelvin-Source Connection

被引:3
|
作者
Chang, Che-Wei [1 ]
Spieler, Matthias [1 ]
Burgos, Rolando [1 ]
El-Refaie, Ayman [2 ]
Dong, Dong [1 ]
机构
[1] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[2] Marquette Univ, Opus Coll Engn, Milwaukee, WI USA
关键词
Paralleled SiC MOSFETs; current sharing; balancing method; gate driver; differential mode choke (DMC);
D O I
10.1109/APEC48139.2024.10509160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Paralleling the SiC MOSFETs is a popular solution to increase the current capacity. However, the unbalanced current sharing among paralleled SiC MOSFETs yields issues of unbalanced losses, unequal junction temperatures, or even thermal runaway, which may eventually lead to the device failure and reduce stability. To address the issue, this paper proposed a passive balancing method for unbalanced dynamic current sharing. The proposed solution requires only a differential mode choke ( DMC) and does not need active control which is suitable for low-cost applications. The mechanism of dynamic current sharing is firstly analyzed. Based on the discovered feedback mechanism, the DMC is placed on the gate driving path to suppress the unbalanced gate currents and further balance the power currents. Both simulation and experimental results are shown to verify the performance of the proposed method. The proposed solution has negligible impact on the switching speed and does not increase the commutation loop inductance.
引用
收藏
页码:1589 / 1595
页数:7
相关论文
共 45 条
  • [41] A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling
    Zheng, Zexiang
    Chen, Cai
    Lv, Jianwei
    Yan, Yiyang
    Liu, Jiaxin
    Kang, Yong
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (09) : 11060 - 11073
  • [42] Cu Clip-Bonding Method With Optimized Source Inductance for Current Balancing in Multichip SiC MOSFET Power Module
    Wang, Laili
    Zhang, Tongyu
    Yang, Fengtao
    Ma, Dingkun
    Zhao, Cheng
    Pei, Yunqing
    Gan, Yongmei
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (07) : 7952 - 7964
  • [43] A Junction Temperature and Package Aging Decoupling Evaluating Method for SiC MOSFETs Based on the Turn-on Drain-Source Current Overshoot
    Zhang, Qinghao
    Zhang, Pinjia
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (11) : 14537 - 14546
  • [44] Analysis and optimization of equivalent source inductance for balancing dynamic current of multi-chip SiC power modules based on Cu-clip Bonding
    Liu, Xun
    Ma, Kun
    Sun, Yameng
    Zhang, Xiao
    Song, Yifan
    Li, Xuehan
    Chen, Arming
    Zhou, Yang
    Liu, Sheng
    2024 25TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT, 2024,
  • [45] A Dynamic Current Sharing Method in Multi-chip SiC Power Module Using Stacked DBC Bridges and Decoupling Capacitors Based on the Original Simple Module Layout
    Lv, Jianwei
    Zhang, Chi
    Chen, Cai
    Kang, Yong
    2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 184 - 188