High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

被引:0
|
作者
Chen, Liang [1 ,2 ]
Xie, Shaohua [1 ]
Lan, Jianyu [3 ]
Chai, Jixing [4 ]
Lin, Tingjun [1 ]
Hao, Ququ [1 ]
Chen, Jinrong [1 ]
Deng, Xi [1 ]
Hu, Xiaolong [2 ]
Li, Yuan [4 ]
Wang, Wenliang [1 ]
Li, Guoqiang [1 ,2 ,5 ]
机构
[1] South China Univ Technol, Sch Mat Sci & Engn, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Peoples R China
[2] South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510641, Peoples R China
[3] Shanghai Inst Space Power Sources, State Key Lab Space Power Sources Technol, Shanghai 200003, Peoples R China
[4] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
[5] Guangdong Choicore Optoelect Co Ltd, Heyuan 517003, Peoples R China
基金
中国国家自然科学基金;
关键词
InGaN nanorods; PEDOT:PSS; photodetectors; plasmonic; surface passivation; SURFACE PASSIVATION; HIGH-PERFORMANCE; NANOWIRES;
D O I
10.1021/acsami.4c06132
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 x 10(10) Jones, and 439/725 mu s, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.
引用
收藏
页码:29477 / 29487
页数:11
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