Light-Induced Static and Dynamic Magnetization Modulation in Magnetoelectric Heterostructure for Beyond-CMOS Devices

被引：0
|
作者：
Pathak, Pankaj [1 ]
Kumar, Ajay [1 ]
Mallick, Dhiman [1 ]
机构：
[1] IIT Delhi, Dept Elect Engn, New Delhi 110016, India
来源：
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词：
Magnetoelectric; Photo-strain; Magnetoresistance; Ferromagnetic Resonance;
D O I：
10.1109/EDTM58488.2024.10512272
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study explores a novel approach in magnetoelectric (ME) heterostructure, addressing challenges associated with its high operational electric fields and intricate electrical contacts. By utilizing light-induced internal electric fields, both static and dynamic magnetization modulation in ME heterostructure is observed. The magnetoresistance and bidirectional ferromagnetic resonance shifts, indicating localized static and dynamic magnetization control is observed. This work can provide a framework for optically controlled ME-based memory, signal processing, and communication devices.
引用
收藏
页码：292 / 294
页数：3
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