Trade-off effect of hydrogen-bonded dopant-free hole transport materials on performance of inverted perovskite solar cells

被引:4
|
作者
Wang, Zheng [1 ]
Zhang, Jiakang [2 ]
Rahman, Sunardi [3 ,4 ,6 ]
Matta, Sri Kasi [5 ,7 ]
Si, Mrinal Kanti [8 ]
Zhang, Zhenhao [1 ]
Zou, Muhua [1 ]
Wang, Hongzhen [1 ]
Russo, Salvy P. [7 ]
Zhou, Zhongmin [2 ]
Zhang, Haichang [1 ]
Liu, Maning [3 ,4 ,6 ]
机构
[1] Qingdao Univ Sci & Technol, Sch Polymer Sci & Engn, Key Lab Rubber Plast, Minist Educ Shandong Prov QUST, 53 Zhengzhou Rd, Qingdao 266042, Peoples R China
[2] Qingdao Univ Sci & Technol, Coll Chem & Mol Engn, Qingdao 266042, Peoples R China
[3] Lund Univ, Ctr Anal & Synth, Dept Chem, POB 124, S-22100 Lund, Sweden
[4] Lund Univ, Dept Chem, Wallenberg Initiat Mat Sci Sustainabil, S-22100 Lund, Sweden
[5] Univ Tsukuba, Ctr Computat Sci, 1Chome Tennodai, Tsukuba, Ibaraki 3050006, Japan
[6] Lund Univ, NanoLund, S-22100 Lund, Sweden
[7] RMIT Univ, Australian Res Council Ctr Excellence Exciton Sci, Sch Sci, Melbourne, Vic, Australia
[8] Sardar Patel Univ, Balaghat, Madhya Pradesh, India
关键词
Hydrogen bonding; Hole-transport materials; Inverted perovskite solar cells; H-aggregates; Hole mobility; Interfacial passivation; EFFICIENT; BLENDS;
D O I
10.1016/j.nanoen.2024.109870
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Benefiting from their ordered orientation and superior stability compared to traditional conjugated materials, hydrogen bonding (HB)-induced H -aggregates in organic small molecule hole -transport materials (HTMs) hold a big potential for high-performance inverted perovskite solar cells (IPSCs). However, H -aggregates can also lead to excessive face -aggregation by forming the gaps between aggregates, which is in turn unfavorable for charge mobility and thus for the overall device performance. Herein, we design and synthesize a new set of HBcontaining triphenylamine-based small molecules to tailor the degree of H -aggregation, namely O1 (without HB), O2 (unilateral HB unit), and O3 (bilateral HB units). These HTMs make a clear trade-off effect on the charge mobility within the HTM and the interfacial properties of perovskite and HTM. Although the interfacial hole extraction process is promoted upon the HB-functionalized interface, the best performance of IPSCs is still achieved by O1 HTM, which is mainly influenced by the higher hole mobility without HB-induced H -aggregates. Nevertheless, the photo stability of as -fabricated devices is effectively improved upon the HB passivation effect on the interface of HTM (O2 or O3) and perovskite, as well as the better quality of atop perovskite layers with less grain boundary compared to the reference case (O1).
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页数:10
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