Modeling I-MOS Capacitor C-V Characteristic for Non-Linear Charge Sensitive Amplifiers

被引：0

作者：

Giroletti, Simone ^{[1
,3
]}

Shojaei, Fatemeh ^{[1
,3
]}

Manghisoni, Massimo ^{[2
,3
]}

Ratti, Lodovico ^{[1
,3
]}

Vacchi, Carla ^{[1
,3
]}

机构：

[1] Univ Pavia, Dept Elect Comp & Biomed Engn, Pavia, Italy

[2] Univ Bergamo, Dept Engn & Appl Sci, Daimine, Italy

[3] INFN Pavia, Pavia, Italy

来源：

2024 19TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME 2024 | 2024年

关键词：

MOS Capacitor; Dynamic Signal Compression; Modeling; Charge Sensitive Amplifiers; SIGNAL COMPRESSION; VARACTORS; IMAGER;

D O I：

10.1109/PRIME61930.2024.10559677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytic model for the C-V characteristic of Inversion-Mode MOS (I-MOS) capacitors is defined, to be used in the design of Charge Sensitive Amplifiers (CSAs) with dynamic signal compression feature. The model is derived from the equations governing channel inversion in the two and four terminal metal-oxide-semiconductor structure. A comparison between the model predictions and the simulation results is provided for MOS capacitors and CSAs in a 65 nm CMOS technology.

引用

页数：4

共 8 条

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