Enabling MOCVD production on next generation 150 mm Indium Phosphide wafer size

150 mm Indium Phosphide wafers are now commercially available with crystal quality comparable to wafer of smaller radius. This may pave the way for scaling up the production of a multitude of photonic devices for Datacoms operating in the 1.30- 1 . 55 mu m infrared range with a gain in wafer surface of factor 4 and a reduction of roughly 50% in die cost. To achieve this goal, it is of utmost importance to prove that both AlGaInAs and InGaAsP quaternary compound semiconductors can be grown by metal-organic chemical vapor deposition (MOCVD) on wafers of larger sizes with both thickness and composition uniformities comparable to those achievable on 75 mm. In this article, we report pioneering production technology developments based on the Planetary Reactor (R) design. Both reactor and related inlet geometry have been deeply revisited with the introduction of a novel 4-fold injector, which in combination with Cl 2 In-situ chamber clean, prove to enable such transition in wafer size. Sub-nanometric photoluminescence in-wafer uniformities are demonstrated and historic challenges, such as drift in material composition of highly sensitive InGaAsP alloys during a production campaign, are addressed thanks to this unique combination. Uniformity, tunability and reproducibility results are thus presented for two prototypical case scenarios: a highly strained AlGaInAs multiple quantum well (MQW) and a bulk InGaAsP layer with wavelength emission of 1550 nm and 1100 nm respectively to corroborate reactor flexibility in meeting industry requirements for next device generation.