Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

被引：8

作者：

Xu, Hongjun ^{[1
,2
,3
]}

Hsu, Ming-Chien ^{[4
,5
,6
]}

Fuh, Huei-Ru ^{[4
,5
,7
]}

Feng, Jiafeng ^{[8
]}

Han, Xiufeng ^{[8
]}

Zhao, Yanfeng ^{[1
,2
,3
]}

Zhang, Duan ^{[1
,2
,3
]}

Wang, Xinming ^{[9
]}

Liu, Fang ^{[10
]}

Liu, Huajun ^{[10
]}

Cho, Jiung ^{[11
]}

Choi, Miri ^{[12
]}

Chun, Byong Sun ^{[13
]}

Coileain, Cormac O. ^{[1
,2
,3
]}

Wang, Zhi ^{[1
,2
,3
]}

Jalil, Mansoor B. A. ^{[6
]}

Wu, Han-Chun ^{[1
,2
,3
]}

Chang, Ching-Ray ^{[4
,5
]}

机构：

[1] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China

[2] Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China

[3] Beijing Inst Technol, Micronano Ctr, Beijing 100081, Peoples R China

[4] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[5] Natl Taiwan Univ, Inst Appl Phys, Taipei 10617, Taiwan

[6] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore

[7] Yuan Ze Univ, Dept Chem Engn & Mat Sci, Taoyuan 320, Taiwan

[8] Univ Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[9] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[10] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China

[11] Korea Basic Sci Inst, Western Seoul Ctr, Seoul 03579, South Korea

[12] Korea Basic Sci Inst, Chuncheon Ctr, Chunchon 24341, South Korea

[13] Korea Res Inst Stand & Sci, Div Ind Metrol, Daejeon 305340, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2018年 / 6卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

VANADIUM DISULFIDE NANOSHEETS; NEGATIVE MAGNETORESISTANCE; GIANT MAGNETORESISTANCE; ANDERSON LOCALIZATION; ABSENCE; FERROMAGNETISM; DIFFUSION; GRAPHENE;

D O I：

10.1039/c7tc05769e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of -10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, B-c, and the MR shows a plateau of near zero MR. When B < B-c, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.

引用

页码：3058 / 3064

页数：7

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