NUCLEATION AND GROWTH STUDY OF Al2O3 FILM FABRICATED THROUGH ATOMIC LAYER DEPOSITION ON PET SUBSTRATE

被引:0
|
作者
Li, Wang [1 ]
Hu, Jiacheng [1 ]
Wen, Di [1 ]
Cao, Kun [1 ]
Chen, Rong [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
D O I
10.1109/CSTIC61820.2024.10532080
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
The optical parameters and compactness of ultrathin film on flexible substrates are important for the encapsulation of photoelectric devices. However, guaranteeing optical properties in inorganic films on flexible organic substrates proves challenging due to temperature sensitivity. Here, ultrathin Al2O3 films on Si, glass, and flexible PET substrates are fabricated using atomic layer deposition (ALD). Films on PET displayed infiltration and nucleation during initial growth, while those on glass experienced nucleation delay. Examining plasma pretreatment and post-treatment effects on refractive index and transmittance in ultra-thin Al2O3 films on flexible substrates, O-2 plasma-assisted ALD exhibited a high refractive index, excellent uniformity, and robust mechanical flexibility. This makes it a promising choice for encapsulation layers in flexible electronics.
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页数:4
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