Novel 2DEG System at the HfO2/STO Interface

被引:0
|
作者
Yin, Hang [1 ,2 ]
Zhu, Huapei [1 ,2 ]
Wang, Shuanhu [1 ,2 ]
Jin, Kexin [1 ,2 ]
机构
[1] Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Condensed Matter Struct & Propert, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
H-2 plasma treating; HfO2/STO; 2DEG; ferroelectricity; Rashba SOC; ELECTRON-GAS; FERROMAGNETISM; CONDUCTION;
D O I
10.1021/acsami.4c03115
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H-2 plasma to pretreat the SrTiO3 (STO) substrate and then fabricate HfO2/STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin-orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.
引用
收藏
页码:26915 / 26921
页数:7
相关论文
共 50 条
  • [31] Interface states and Pb defects at the Si(100)/HfO2 interface
    Hurley, PK
    O'Sullivan, BJ
    Afanas'ev, VV
    Stesmans, A
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (02) : G44 - G46
  • [32] Shape Resonances in superconducting gaps in a 2DEG at oxide-oxide interface
    Bianconi, A.
    Innocenti, D.
    Valletta, A.
    Perali, A.
    17TH INTERNATIONAL CONFERENCE ON RECENT PROGRESS IN MANY-BODY THEORIES (MBT17), 2014, 529
  • [33] Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures
    Singh, Rohit
    Khan, Md. Arif
    Mukherjee, Shaibal
    Kranti, Abhinav
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (07) : 2850 - 2854
  • [34] FABRICATION AND CHARACTERIZATION OF MULTILAYER HfO2/Ag/HfO2 FILMS
    Niaz, N. A.
    Ramzan, M.
    Kamran, K.
    Shakoor, A.
    Imran, M.
    Hussain, R.
    Ghauri, M., I
    Bibi, A.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2019, 14 (03) : 823 - 830
  • [35] Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes
    Fu, Junxue
    Chen, Kevin J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2479 - 2482
  • [36] Energy Level Width of 2DEG in Different Well in Mesoscopic System
    Xu, Gang
    He, Ye Lu
    MECHATRONICS AND INTELLIGENT MATERIALS III, PTS 1-3, 2013, 706-708 : 395 - 398
  • [37] Giant Electroresistive Ferroelectric Diode on 2DEG
    Kim, Shin-Ik
    Gwon, Hyo Jin
    Kim, Dai-Hong
    Kim, Seong Keun
    Choi, Ji-Won
    Yoon, Seok-Jin
    Chang, Hye Jung
    Kang, Chong-Yun
    Kwon, Beomjin
    Bark, Chung-Wung
    Hong, Seong-Hyeon
    Kim, Jin-Sang
    Baek, Seung-Hyub
    SCIENTIFIC REPORTS, 2015, 5
  • [38] Modification of a shallow 2DEG by AFM lithography
    Nemutudi, R
    Curson, NJ
    Appleyard, NJ
    Ritchie, DA
    Jones, GAC
    MICROELECTRONIC ENGINEERING, 2001, 57-8 : 967 - 973
  • [39] Energy band alignment at the (100)Ge/HfO2 interface
    Afanas'ev, VV
    Stesmans, S
    APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2319 - 2321
  • [40] Interface structure and non-stoichiometry in HfO2 dielectrics
    Baik, HS
    Kim, M
    Park, GS
    Song, SA
    Varela, M
    Franceschetti, A
    Pantelides, ST
    Pennycook, SJ
    APPLIED PHYSICS LETTERS, 2004, 85 (04) : 672 - 674