Recent progress in heterogeneous integration on the silicon nitride platform using micro-transfer printing

被引：0

作者：

Billet, Maximilien ^{[1
]}

Vanackere, Tom ^{[1
,2
]}

Vandekerckhove, Tom ^{[1
,2
]}

Niels, Margot ^{[1
]}

Reis, Luis ^{[1
,2
]}

Maes, Dennis ^{[1
,3
]}

Kiewiet, Max ^{[1
]}

Akritidis, Konstantinos ^{[1
]}

Cuyvers, Stijn ^{[1
]}

Poelman, Stijn ^{[1
]}

Reep, Tom ^{[1
]}

Oliva, Valeria Bonito ^{[1
]}

Leo, Francois ^{[2
]}

Roelkens, Gunther ^{[1
]}

Kuyken, Bart ^{[1
]}

机构：

[1] Univ Ghent, Photon Res Grp, INTEC, Imec, Ghent, Belgium

[2] Univ Libre Bruxelles, OPERA Photon, Brussels, Belgium

[3] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, Villeneuve Dascq, France

来源：

SILICON PHOTONICS XIX | 2024年 / 12891卷

关键词：

Heterogenous integration; Transfer printing; Silicon nitride; Silicon photonics; III-V; Lithium niobate;

D O I：

10.1117/12.2691017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photonic integrated circuits enable the miniaturization of photonic systems by integrating key optical functions on a chip. While CMOS compatible silicon and silicon nitride are very efficient platforms for passive circuits, they lack active key functionalities for the realization of a full system on a chip. A versatile solution is to use micro-transfer printing for heterogeneous integration of active devices on such platforms. Here we present the recent advances of micro-transfer printing on silicon nitride and discuss the remaining challenges.

引用

页数：4

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