Improving Epitaxial Growth of γ-Al2O3 Films via Sc2O3/Y2O3 Oxide Buffers

被引：0
|
作者：
Gougam, Sliman [1 ]
Schubert, Markus Andreas [1 ]
Stolarek, David [1 ]
Thapa, Sarad Bahadur [2 ]
Zoellner, Marvin Hartwig [1 ]
机构：
[1] IHP Leibniz Inst innovat Mikroelekt, Technologiepk 25, D-15236 Frankfurt, Oder, Germany
[2] Siltron AG, Einsteinstr 172, D-81677 Munich, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 12期
关键词：
plasma-assisted molecular beam epitaxy; rare-earth oxides; Si(111); gamma-Al2O3; SI(111); GAN;
D O I：
10.1002/pssa.202400228
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heteroepitaxial growth of gamma-Al2O3 on Sc2O3/Y2O3/Si (111) is achieved with oxygen plasma-assisted molecular beam epitaxy in order to prevent polycrystalline grain boundary formation caused by lattice mismatch. Substrate temperature as well as oxygen flow are adjusted to optimize epitaxial growth conditions around 715-760 degrees C and 1.9 sccm, respectively. Epitaxial growth is monitored in situ by reflection high-energy diffraction, while surface morphology is studied by scanning electron microscopy ex-situ. X-ray diffraction indicates epitaxial out-of-plane 111 orientation with oxygen flow above 0.6 sccm. However, transmission electron microscopy shows stacking fault formation for high oxygen flows. Finally, nanobeam electron diffraction confirms Smrcok model of a spinel-like gamma-Al2O3 crystal structure.
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页数：6
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