Investigating Dielectric Relaxation Currents for a Deeper Understanding of Capacitance and Interface in Metal-Insulator-Metal Capacitor

Accurate capacitance measurement is critical for the development of metal-insulator-metal (MIM) capacitors for semiconductor devices. In this study, we compare the frequency-dependent capacitances of ZrO2 and Al-doped ZrO2 (ZAZ) thin films using LCR measurements and pulsed current-voltage measurements. Our findings show that pulse measurement provides a more precise evaluation of the electrical characteristics of the MIM capacitors, resulting in more accurate capacitance measurements for dynamic random access memory (DRAM) application. We also investigate the contribution of the oxygen vacancies or the interface between the dielectric and electrodes to the capacitance by evaluating the dielectric relaxation current, which reveals the charges trapped in the interface. Additionally, we examine the effect of the Al dopant on the discharge behavior. These results provide valuable insights for the accurate measurement and optimization of MIM capacitors in semiconductor device research.