High-Speed Low-Voltage MOSCAP-Driven Silicon Microring Modulator

被引：0
|
作者：
Hsu, Wei-Che [1 ,2 ]
Nujhat, Nabila [1 ]
Kupp, Benjamin [1 ]
Conley, John F., Jr. [1 ]
Wang, Alan X. [1 ,2 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[2] Baylor Univ, Dept Elect & Comp Engn, 1 Bear Pl 97356, Waco, TX 76798 USA
来源：
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2024年
关键词：
D O I：
10.1109/SiPhotonics60897.2024.10544126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated a highly efficient silicon microring modulator integrated with high-mobility titanium-doped indium oxide/hafnium oxide/silicon MOSCAP. It achieved a low V-pi center dot L of 0.12 V center dot cm and low driving voltage (V-pp) of 0.8V, resulting in 25 Gb/s open eye with 53 fJ/bit energy efficiency.
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页数：2
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