Analysis of TCC in p-n Short Silicon Diodes at 300-400 K

被引：0

作者：

Kubica, R. M. R. ^{[1
,2
]}

Albouy, A. ^{[1
,2
]}

Balestra, F. ^{[2
,3
]}

Aliane, A. ^{[1
,2
]}

Leduc, P. ^{[1
]}

机构：

[1] Grenoble Alpes Univ, F-38400 Grenoble, France

[2] CEA Leti, F-38054 Grenoble, France

[3] Grenoble Alpes Univ, CNRS, Grenoble INP, CROMA, F-38000 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 08期

关键词：

Silicon; Semiconductor diodes; Temperature sensors; Charge carriers; Current density; Analytical models; Semiconductor process modeling; Analytical model (AM); p-n-diode; short diode; silicon; technology computer-aided design (TCAD); temperature coefficient of current (TCC); thermal sensitivity; thermal sensors; TEMPERATURE-DEPENDENCE; CARRIER MOBILITY; RECOMBINATION; MODEL;

D O I：

10.1109/TED.2024.3408772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a study of the thermal sensitivity of p-n short silicon diodes represented by the temperature coefficient of current (TCC) for thermal sensing applications. It proposes an analytical model (AM) of the TCC of p-n short silicon diodes under low-level injections and in the temperature range of 300-400 K. First, the TCC is studied at diffusion and recombination regimes and it is discriminated between different physical contributions. Then, it is followed by a discussion on the origins and influences of these contributions to provide a usable and simplified analytical expression of the TCC. Finally, the proposed AM is compared to technology computer-aided design (TCAD) simulations and experimental results at 300-400 K. It shows a strong correlation for different designs of p-n short diodes.

引用

页码：4476 / 4482

页数：7

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