Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion

被引:2
|
作者
Su, Shu Hsuan. [1 ]
Huang, Tzu Tai [1 ]
Pan, Bi-Rong [1 ]
Lee, Jung-Chuan [1 ,6 ]
Qiu, Yi Jie [1 ]
Chuang, Pei-Yu [2 ]
Gultom, Pangihutan [1 ]
Cheng, Cheng-Maw [2 ,3 ]
Chen, Yi-Chun [1 ]
Huang, Jung-Chung Andrew [1 ,4 ,5 ]
机构
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan
[4] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 811726, Taiwan
[5] Minist Sci & Technol, Taiwan Consortium Emergent Crystalline Mat, Taipei 106, Taiwan
[6] Sheng Chuang Technol Co, Taichung 407330, Taiwan
关键词
spin-to-charge conversion; MoS2; inverse edelstein effect length; spin-orbitalcoupling; TRANSITION-METAL DICHALCOGENIDES; HALL; INTERFACE; MOS2;
D O I
10.1021/acsami.4c03360
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (lambda(IEE)), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.
引用
收藏
页码:24122 / 24131
页数:10
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