Phase-matched third-harmonic generation in silicon nitride waveguides

被引:1
|
作者
Vijayakumar, Surendar [1 ]
Vyas, Kaustubh [5 ]
Espinosa, Daniel H. G. [5 ]
Reshef, Orad [4 ]
Song, Meiting [2 ]
Awan, Kashif Masud [3 ]
Choudhary, Saumya [1 ]
Cardenas, Jaime [1 ]
Boyd, Robert W. [1 ]
Dolgaleva, Ksenia [4 ,5 ]
机构
[1] Univ Rochester, Inst Opt, 480 Intercampus Dr, Rochester, NY 14627 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA USA
[3] Washington Univ, Inst Mat Sci & Engn, St. Louis, MO 63130 USA
[4] Univ Ottawa, Dept Phys, 25 Templeton St, Ottawa, ON K1N 6N5, Canada
[5] Univ Ottawa, Sch Elect Engn & Comp Sci, 800 King Edward Ave, Ottawa, ON K1N 6N5, Canada
基金
美国国家科学基金会;
关键词
harmonic generation; waveguide; frequency conversion; silicon nitride; nonlinear optics; 3RD HARMONIC-GENERATION; INTEGRATED PHOTONICS; REFRACTIVE-INDEX; EFFICIENT; INTERFERENCE; LASER;
D O I
10.1515/nanoph-2024-0120
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Third-harmonic generation (THG) in silicon nitride waveguides is an ideal source of coherent visible light, suited for ultrafast pulse characterization, telecom signal monitoring and self-referenced comb generation due to its relatively large nonlinear susceptibility and CMOS compatibility. We demonstrate third-harmonic generation in silicon nitride waveguides where a fundamental transverse mode at 1,596 nm is phase-matched to a TM02 mode at 532 nm, confirmed by the far-field image. We experimentally measure the waveguide width-dependent phase-matched wavelength with a peak-power-normalized conversion efficiency of 5.78 x 10-7 %/W2 over a 660-mu m-long interaction length.
引用
收藏
页码:3385 / 3393
页数:9
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