Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

被引：0

作者：

Bennett, Christopher H. ^{[1
]}

Xiao, T. Patrick ^{[1
]}

Leonard, Thomas ^{[2
]}

Zhan, Xun ^{[2
]}

Gearba-Dolocan, Raluca ^{[2
]}

Young, Joshua ^{[1
]}

Vizkelethy, Gyorgy ^{[1
]}

Bielejec, Ed ^{[1
]}

Hughart, David ^{[1
]}

Marinella, Matthew ^{[3
]}

Incorvia, Jean Anne ^{[2
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87108 USA

[2] Univ Texas Austin, Chandra Family Dept Elect & Comp Engn, Austin, TX 78712 USA

[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 04期

关键词：

Displacement damage; fault injection; post-complementary metal oxide semiconductor (CMOS) logic; spintronics; total dose effects;

D O I：

10.1109/TNS.2023.3333819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiated parts followed a similar degradation curve to previously tested tunnel junction parts in response to heavy ion irradiation. Microscopy and spectroscopy methods confirm significant damage in some devices.

引用

页码：454 / 460

页数：7

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