Transition from antiferromagnetic metal to room-temperature ferromagnetic semiconductor in monolayer CrTe 2 via Li adsorption

被引:3
|
作者
Zhang, Yiwen [1 ]
Zhang, Yifan [1 ]
Ye, Haoshen [2 ]
Zhang, Junting [1 ]
Wang, Jianli [1 ]
机构
[1] China Univ Min & Technol, Sch Mat & Phys, Xuzhou 221116, Peoples R China
[2] Southeast Univ, Sch Phys, Key Lab Quantum Mat & Devices, Minist Educ, Nanjing 211189, Peoples R China
关键词
MAGNETOCRYSTALLINE ANISOTROPY; PIEZOELECTRICITY; ENERGY;
D O I
10.1103/PhysRevB.109.195426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The lacking of two-dimensional intrinsic room -temperature ferromagnetic semiconductors severely restricts the development of future low -dimensional semiconductor spintronic devices. Is it possible to indirectly obtain ferromagnetic semiconductors that work at room temperature from the available antiferromagnetic metal through quantum state regulation? Here we employ the density functional theory to systematically investigate the electronic and magnetic properties of the 1T-CrTe 2 monolayer under Li atomic adsorption. The 1T-CrTe 2 monolayer is an antiferromagnetic metal, which is not suitable for semiconductor spintronic device applications. Interestingly, a desired room -temperature ferromagnetic semiconductor with a large out -of -plane piezoelectricity, i.e., the LiCrTe 2 monolayer, is achieved successfully after one Li atomic layer is adsorbed at the 1T-CrTe 2 surface. The Curie temperature is above room temperature and reaches 392 K, which remains above room temperature and increases with the increase of in -plane biaxial tensile strain. A semiconductor -to -metal conversion and a change of the orientation of the easy magnetization axis can be realized with robust room -temperature ferromagnetism through electrostatic doping. Our results indicate that the atomic adsorption is an effective strategy to achieve van der Waals room -temperature ferromagnetic semiconductors.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] THE METAL-SEMICONDUCTOR TRANSITION IN AMORPHOUS SI1-XCRX FILMS - DETECTION OF THE TRANSITION BY ROOM-TEMPERATURE MEASUREMENTS
    MOBIUS, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 144 (02): : 759 - 766
  • [22] Room-Temperature Polarized Light-Emitting Diode-Based on a 2D Monolayer Semiconductor
    Shi, Xiuqi
    Li, Wenfei
    Lan, Xinhui
    Guo, Qianqian
    Zhu, Guangpeng
    Du, Wei
    Wang, Tao
    SMALL, 2023, 19 (43)
  • [23] Monolayer Ru(OLi)2 as an Ideal Room-Temperature Ferrovalley Semiconductor with Intrinsic Out-of-Plane Ferromagnetism
    Zhao, Yun-Jing
    Wang, Zhi-Yong
    CRYSTAL GROWTH & DESIGN, 2024, 24 (23) : 10003 - 10012
  • [24] COMMENT ON THE METAL-SEMICONDUCTOR TRANSITION IN AMORPHOUS SI1-X-CRX FILMS AT ROOM-TEMPERATURE
    ELEFANT, D
    GLADUN, C
    HEINRICH, A
    SCHUMANN, J
    VINZELBERG, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 151 (02): : K155 - K156
  • [25] Room-temperature ferromagnetism in metal-insulator transition nanoparticles of VO2
    Fukawa, Akihiro
    Nakazawa, Takuto
    Tamura, Josuke
    Murata, Kyosuke
    Shimizu, Tomohiro
    Miyata, Masanobu
    Koyano, Mikio
    Takase, Kouichi
    APPLIED PHYSICS LETTERS, 2023, 122 (05)
  • [26] DETECTION OF THE METAL-SEMICONDUCTOR TRANSITION IN AMORPHOUS SI1-XCRX FILMS BY ROOM-TEMPERATURE MEASUREMENTS
    MOBIUS, A
    PHYSICA SCRIPTA, 1988, 38 (02): : 221 - 223
  • [27] Two-dimensional C12Mn2/C12Cr2 as a room-temperature half metal/antiferromagnetic semiconductor: a systematic study
    Lin, Zheng-Zhe
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (04) : 3394 - 3404
  • [28] Designed two dimensional transition metal borides (TM2B12): Robust ferromagnetic half metal and antiferromagnetic semiconductor
    Yao, Xiaojing
    Wang, Lizhen
    Sun, Yi
    Lu, Jinlian
    Zhang, Xiuyun
    APPLIED PHYSICS LETTERS, 2023, 122 (19)
  • [29] FLICKER NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FROM LIQUID-HELIUM TO ROOM-TEMPERATURE
    HAFEZ, IM
    GHIBAUDO, G
    BALESTRA, F
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2211 - 2213
  • [30] An intrinsic room-temperature half-metallic ferromagnet in a metal-free PN2 monolayer
    Zhang, Quan
    Zhang, Yang
    Li, Ying
    Fang, Dangqi
    Che, Junwei
    Zhang, Erhu
    Zhang, Peng
    Zhang, Shengli
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (11) : 7077 - 7083