Solution-processed CsPbBr3 perovskite films via CsBr intercalated PbBr2 intermediate for high-performance photodetectors towards underwater wireless optical communication

被引:5
|
作者
Zhu, Haiyang [1 ]
Chen, Hongfei [2 ]
Fei, Jianjian [1 ]
Deng, Yutong [1 ]
Yang, Tian [1 ]
Chen, Pinhao [1 ]
Liang, Ying [1 ]
Cai, Yongqing [2 ]
Zhu, Lu [1 ]
Huang, Zhanfeng [1 ]
机构
[1] Sun Yat Sen Univ, Sch Microelect Sci & Technol, Guangdong Prov Key Lab Optoelect Informat Proc Chi, Zhuhai 519082, Guangdong, Peoples R China
[2] Univ Macau, Inst Appl Phys & Mat Engn, Macau 999078, Peoples R China
基金
中国国家自然科学基金;
关键词
All-inorganic perovskite; CsPbBr3; perovskite; Perovskite photodetectors; PbBr2 morphology control; First-principles calculation; SOLAR-CELLS; LIGHT;
D O I
10.1016/j.nanoen.2024.109513
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
All inorganic CsPbBr 3 perovskite is regarded as a promising candidate of halide perovskites and has attracted great attention due to its superior optoelectronic properties and stability. However, the low and unbalanced solubility of precursors and uncontrollable crystallization result in poor coverage and impurity phases in CsPbBr 3 polycrystalline films, hindering the application in optoelectronic devices. In this work, a facile CsBr intercalated nanostructured intermediate based two-step method is reported for simultaneously achieving good morphology and pure phase of CsPbBr 3 films. With the CsBr intercalation, the intermediate films deposited in the first step exhibit porous nanostructure and Cs x Pb 2 Br 4+ x crystal phase. This unique porous morphology and crystal structure favor CsBr solution penetration and Cs + ion diffusion. First -principles calculations are conducted to investigate the phase diagram of intermediates and the diffusion kinetics of Cs + ions in the various polymorphs. The key role of CsBr intercalation is confirmed for achieving high -quality CsPbBr 3 perovskite films with features of pinhole free, pure phase, large grains, and high crystallinity. Photodetectors based on optimized CsPbBr 3 films exhibit excellent performance with a peak EQE of 83%, responsivity of 0.35 A/W, and specific detectivity of 1.25x10 13 Jones. Fast response speed is also achieved with rise/fall time of 1.41 mu s and 2.06 mu s and -3 dB bandwidth up to 800 kHz. Moreover, CsPbBr 3 PD shows great potential in the application of underwater wireless optical communication due to its low background noise current under ambient light illumination. Overall, this work paves the way for further research on optoelectronic devices and their applications based on CsPbBr 3 films.
引用
收藏
页数:11
相关论文
共 27 条
  • [21] Atomic-Layer Deposition-Assisted Double-Side Interfacial Engineering for High-Performance Flexible and Stable CsPbBr3 Perovskite Photodetectors toward Visible Light Communication Applications
    Cen, Guobiao
    Liu, Yujin
    Zhao, Chuanxi
    Wang, Gai
    Fu, Yong
    Yan, Genghua
    Yuan, Ye
    Su, Chunhua
    Zhao, Zhijuan
    Mai, Wenjie
    SMALL, 2019, 15 (36)
  • [22] All-Inorganic CsPbBr3 Perovskite Nanocrystals/2D Non-Layered Cadmium Sulfide Selenide for High-Performance Photodetectors by Energy Band Alignment Engineering
    Peng, Mingfa
    Ma, Yulong
    Zhang, Lei
    Cong, Shan
    Hong, Xuekun
    Gu, Yiheng
    Kuang, Yawei
    Liu, Yushen
    Wen, Zhen
    Sun, Xuhui
    ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (42)
  • [23] A one-step method to synthesize CH3NH3PbI3:MoS2 nanohybrids for high-performance solution-processed photodetectors in the visible region
    Chandrasekar, Perumal Veeramalai
    Yang, Shengyi
    Hu, Jinming
    Sulaman, Muhammad
    Saleem, Muhammad Imran
    Tang, Yi
    Jiang, Yurong
    Zou, Bingsuo
    NANOTECHNOLOGY, 2019, 30 (08)
  • [24] High-performance CsPbBr3@Cs4PbBr6/SiO2 nanocrystals via double coating layers for white light emission and visible light communication
    Li, Xianwen
    Ma, Wen
    Liang, Dehai
    Cai, Wensi
    Zhao, Shuangyi
    Zang, Zhigang
    ESCIENCE, 2022, 2 (06): : 646 - 654
  • [25] Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides
    Feria, Denice Navat
    Huang, Qi-Zhi
    Yeh, Chun-Shao
    Lin, Shi-Xian
    Lin, Der-Yuh
    Tseng, Bo-Chang
    Lian, Jan-Tian
    Lin, Tai-Yuan
    NANOTECHNOLOGY, 2024, 35 (12)
  • [26] High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas
    Zhao, Tianshi
    Liu, Chenguang
    Zhao, Chun
    Xu, Wangying
    Liu, Yina
    Mitrovic, Ivona Z.
    Lim, Eng Gee
    Yang, Li
    Zhao, Ce Zhou
    JOURNAL OF MATERIALS CHEMISTRY A, 2021, 9 (32) : 17390 - 17399
  • [27] High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene
    Ou-Yang, W.
    Uemura, T.
    Miyake, K.
    Onish, S.
    Kato, T.
    Katayama, M.
    Kang, M.
    Takimiya, K.
    Ikeda, M.
    Kuwabara, H.
    Hamada, M.
    Takeya, J.
    APPLIED PHYSICS LETTERS, 2012, 101 (22)