3.3 kV-class 4H-SiC Epi-refilled Super-junction Diode with Repetitive Surge Current Robustness

被引：1
|
作者：
Cheng, Haoyuan [1 ]
Wang, Hengyu [1 ]
Zhang, Chi [1 ]
Wang, Ce [1 ]
Wan, Jiangbin [1 ]
Han, Jingrui [2 ]
Ting, Hungkit [2 ]
Que, Qianqian [1 ]
Li, Yanjun [1 ]
Bai, Miaoguang [1 ]
Wu, Yiding [1 ]
Sheng, Kuang [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Peoples R China
[2] Guangdong Tianyu Semicond Co LTD, Dongguan, Peoples R China
来源：
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年
基金：
中国国家自然科学基金;
关键词：
Super-junction; trench-refilling; hexagonal cell; surge robustness;
D O I：
10.1109/ISPSD59661.2024.10579635
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, the 4H-SiC super-junction (SJ) Schottky barrier diode (SBD) with hexagonal cell has been fabricated by trench etching and epitaxial regrowth process. The fabricated device achieves a breakdown voltage (BV) of 3570V with specific on-resistance (R-on,R-sp) of 4.5m Omega.cm(2) which breaks the one-dimensional performance limit of the SiC unipolar device. The impact of SJ's mesa width on static I-V and C-V characteristic has also been investigated. With a double pulse test, the fabricated device performs high speed switching over 50kV/mu s. The repetitive surge current test is also carried out on the fabricated device to demonstrate its surge robustness.
引用
收藏
页码：13 / 16
页数：4
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