FABRICATION PROCESS IMPROVEMENT OF AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL

被引：0

作者：

Zhang, Yintong ^{[1
]}

Xu, Zhaozhao ^{[1
]}

Liang, Xuanming ^{[1
]}

Wu, Zhitao ^{[1
]}

Zhou, Yang ^{[2
]}

Xu, Gavin ^{[2
]}

Fang, Ziquan ^{[2
]}

Liu, Donghua ^{[2
]}

Li, Alex ^{[2
]}

Qian, Wensheng ^{[2
]}

机构：

[1] Huahong Semicond Wuxi Ltd, Wuxi 214029, Jiangsu, Peoples R China

[2] Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China

来源：

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年

关键词：

NOR type Dual-bit/cell (NORD); Split-gate; Floating-gate; Symmetry optimization; Non self-aligned; PROGRAM DISTURB;

D O I：

10.1109/CSTIC61820.2024.10531902

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A novel method was proposed to optimize the fabrication process of the aggressively scaled non self-aligned split-gate floating-gate (FG) NOR-type Dual-bit/cell (NORD) flash cell. The improvement method solved the issue of the overlay shift between two times of lithography, which results in the asymmetry FG and control gate (CG) between the two bits in one cell. The cell well implant and lightly doped drain (LDD) implant have been modified to make sure the device performance can match that of conventional cell. The technology computer-aided-design (TCAD) simulation results suggest that the changes in gate lengths don't cause declines in device characteristics and even better performance in readout window and program efficiency, which confirms the feasibility of the fabrication process improvement method.

引用

页数：4

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