Design of Low Power Bandgap Voltage Reference with High Power Supply Rejection Ratio for LDO Application

Voltage reference circuits are very important in electronics nowadays, especially in power management supply. It is used to provide biasing Voltage despite the changes in process, voltage supply, and temperature. A low power bandgap voltage reference circuit was designed which can operate in 1.8 Volts(V), and the topology was implemented in a 180 nanometer(nm) CMOS process. The PSR enhancement stage was added to have a high power supply rejection ratio(PSRR), also the power gating was added to have a low shutdown power. The simulation results show that this reference voltage has an output voltage of 350 millivolts (mV) while the temperature coefficient result was 6.93 parts per million per degree Celsius (ppm/degrees C) at -40 degrees C to +125 degrees C, the Montecarlo analysis shows that the design has a yield of 100%. The circuit has a high power supply rejection ratio(PSRR) value which was 87 dB and 84.3 dB at 100 Hertz(Hz) and 50 kilohertz (KHz) respectively, with a total power dissipation of 84.48 microwatts(mu W) and quiescent current(IQ) of 46.99 microamperes (mu A). The additional feature, which is the power gating when enabled, the circuit will have only 1.60 nanowatts(nW) of total power dissipation. This voltage reference can enhance its temperature coefficient by using the second-order curvature architecture of Bandgap voltage reference(BGR).