Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array

被引:1
|
作者
Bende, Ankit [1 ]
Singh, Simranjeet [1 ,5 ]
Jha, Chandan Kumar [6 ]
Kempen, Tim [2 ]
Cueppers, Felix [2 ]
Bengel, Christopher [4 ]
Zambanini, Andre [3 ]
Nielinger, Dennis [3 ]
Patkar, Sachin [5 ]
Drechsler, Rolf [6 ,7 ]
Waser, Rainer [1 ,2 ]
Merchant, Farhad [8 ]
Rana, Vikas [2 ]
机构
[1] Forschungszentrum Julich, PGI 7, Julich, Germany
[2] Forschungszentrum Julich, PGI 10, Julich, Germany
[3] Forschungszentrum Julich, ZEA 2, Julich, Germany
[4] Rhein Westfal TH Aachen, IWE 2, Aachen, Germany
[5] Indian Inst Technol, Bombay, Maharashtra, India
[6] Univ Bremen, Bremen, Germany
[7] DFKI GmbH, Kaiserslautern, Germany
[8] Newcastle Univ, Newcastle Upon Tyne, Tyne & Wear, England
关键词
MAGIC; RRAM; logic-in-memory; fabrication; MEMORY;
D O I
10.1109/VLSID60093.2024.00100
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devices exhibit distinct SET-to-RESET ratios, enabling the implementation of OR and NOT operations. As the adoption of the MAGIC design style gains momentum, it becomes crucial to understand the breakdown of energy consumption in the various phases of its operation. This paper presents experimental demonstrations of the OR and NOT gates on a 1T1R crossbar array. Additionally, it provides insights into the energy distribution for performing these operations at different stages. Through our experiments across different gates, we found that the energy consumption is dominated by initialization in the MAGIC design style. The energy split-up is 14.8%, 85%, and 0.2% for execution, initialization, and read operations, respectively.
引用
收藏
页码:565 / 570
页数:6
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