High-performance ultrathin solution-processed SnO 2 top-gate thin-film transistors by constructing high-quality dielectric/channel interface

In this work, we developed a low -thermal -budget approach to realize high-performance solution -processed oxide thin-film transistors (TFTs). To construct high -quality dielectric/channel interface, the corrosion -resistant SnO 2 channel and further O 2 plasma pre-treatment were adopted to minimize the problematic interface defects. With this strategy, the afforded solution -processed SnO 2 TFTs exhibited improved electrical performance and stability, including a descent field-effect mobility ( mu FE ) of 21.4 cm 2 /V & sdot; s, high on/off ratio ( I on / I off ) of 10 9 , positive threshold voltage ( V th ) of 0.39 V, steep SS of 94.7 mV/dec, and small Delta V th of 0.08 and -0.03 V under PBS and NBS, respectively. This work demonstrates a promising fabrication approach for solution -processed oxide TFTs towards advanced applications.