Parametrization of the charge-carrier mobility in organic disordered semiconductors

被引：1
|
作者：
Baranovskii, S. D. [1 ,2 ,3 ]
Nenashev, A. V. [1 ,2 ]
Hertel, D. [3 ]
Meerholz, K. [3 ]
Gebhard, F. [1 ,2 ]
机构：
[1] Philipps Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Philipps Univ Marburg, Mat Sci Ctr, D-35032 Marburg, Germany
[3] Univ Cologne, Dept Chem, Luxemburger Str 116, D-50939 Cologne, Germany
来源：
PHYSICAL REVIEW APPLIED | 2024年 / 22卷 / 01期
关键词：
HOPPING TRANSPORT; THEORETICAL DESCRIPTION; CONDUCTION; RECOMBINATION; DRIFT;
D O I：
10.1103/PhysRevApplied.22.014019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An appropriately parametrized analytical equation (APAE) is suggested to account for charge-carrier mobility in organic disordered semiconductors. This equation correctly reproduces the effects of temperature T, carrier concentration n, and electric field F on the carrier mobility mu (T, F, n), as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at variance with those used in the so-called extendedGaussian-disorder-model (EGDM) approach, which is widely exploited in commercially distributed device-simulation algorithms. While the EGDM is valid only for cubic lattices with a specific choice of parameters, the APAE describes charge transport in systems with spatial disorder in a wide range of parameters. The APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms.
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页数：12
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