Evaluation of sensitivity of Extended Gate Field Effect Transistor-biosensor based on V 2 O 5 /GOx for glucose detection

被引:3
|
作者
Felix, Alessandra Teixeira [1 ]
Mulato, Marcelo [2 ]
Guerra, Elidia Maria [1 ]
机构
[1] CAP UFSJ, Dept Quim & Biotecnol & Engn Bioproc, Rod MG 443,Km 07, BR-36497899 Ouro Branco, MG, Brazil
[2] FFCLRP USP, Dept Fis, Ave Bandeirantes 3900, BR-14040901 Ribeirao Preto, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Glucose; Biosensor; EGFET; Sensitivity; FILMS;
D O I
10.1016/j.enzmictec.2024.110428
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
The sensing modified electrode was prepared using glucose oxidase immobilized onto vanadium pentoxide xerogel with glass/FTO as support electrode to evaluate the possibility to construct a V 2 O 5 /GOx Extended Gate Field Effect Transistor biosensor. Previously, our studies exhibited a sensitivity of V 2 O 5 of 58.1 mV/pH. The use of Nafion (R) onto V 2 O 5 /GOx caused a decrease of mass loss after several cycles compared to the modified electrode without Nafion (R) during the EQCM and cyclic voltammetrics studies. Electrical characterization of V 2 O 5 / GOx demonstrated a tendency to stability after 200 s as a function of applied current. In presence of glucose and in different pH, the current decreased when the glucose concentration increased due to the lower active sites of enzyme. After ten voltammetric cycles, the total charge tends to structural stability. In pH = 5.0, the modified electrode based on V 2 O 5 /GOx Extended Gate Field Effect Transistor presented more tendency to sensitivity in different concentration of glucose.
引用
收藏
页数:6
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