Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

被引：0

作者：

Cai, Mingju ^{[1
]}

Chen, Zheng ^{[2
]}

Yang, Yang ^{[2
]}

Zhu, Xiangde ^{[2
]}

Sun, Haoxiang ^{[3
]}

Zhu, Ankang ^{[4
]}

Liu, Xue ^{[1
]}

Han, Yuyan ^{[2
]}

Gao, Wenshuai ^{[1
]}

Tian, Mingliang ^{[2
,5
]}

机构：

[1] Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China

[2] Chinese Acad Sci, Hefei Inst Phys Sci, Anhui Key Lab Low Energy Quantum Mat & Devices, High Magnet Field Lab, Hefei 230031, Peoples R China

[3] Anhui Univ, Stony Brook Inst, Hefei 230601, Peoples R China

[4] Bengbu Univ, Sch Math & Phys, Bengbu 233030, Peoples R China

[5] Anhui Univ, Sch Phys & Optoelect Engn, Hefei 230601, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2024年 / 41卷 / 07期

基金：

中国国家自然科学基金;

关键词：

MAGNETORESISTANCE; SUPERCONDUCTIVITY; TRANSITION;

D O I：

10.1088/0256-307X/41/7/077303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We systematically investigate in-plane transport properties of ternary chalcogenide Bi2Rh3Se2. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi2Rh3Se2. The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.

引用

页数：6

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