Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

We systematically investigate in-plane transport properties of ternary chalcogenide Bi2Rh3Se2. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi2Rh3Se2. The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.