Effect of the incorporation of gallium ions into silver indium sulfide nanocrystals

被引：1
|
作者：
Ban, Jiyeon [1 ]
Eom, So Young [1 ]
Lee, Hak June [2 ,3 ]
An, Mai Ngoc [4 ]
Cho, Beomsu [1 ]
Lee, Yong Ho [1 ]
Bae, Wan Ki [2 ]
Jeong, Kwang Seob [1 ,4 ]
机构：
[1] Korea Univ, Dept Chem, Seoul 02841, South Korea
[2] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
[3] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
[4] Korea Univ, Inst Basic Sci IBS, Ctr Mol Spect & Dynam, Seoul 02841, South Korea
来源：
CHEMICAL COMMUNICATIONS | 2024年 / 60卷 / 44期
基金：
新加坡国家研究基金会;
关键词：
Compendex;
D O I：
10.1039/d4cc00859f
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Gallium ion incorporation into silver indium gallium sulfide nanocrystals is investigated by various methods, including photoluminescence (PL) and X-ray photoelectron spectroscopy. The ZnS shell-growth enhances a PL quantum yield of up to 16%, with which the quantum dot light-emitting diode was successfully fabricated. The effect of Ga ion incorporation into silver indium gallium sulfide nanocrystals on the structure and optical properties is reported.
引用
收藏
页码：5731 / 5734
页数：4
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