Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

被引：3

作者：

Guo, Zixiang ^{[1
]}

Zhang, En Xia ^{[1
]}

Chasin, A. ^{[2
]}

Linten, D. ^{[2
]}

Belmonte, A. ^{[2
]}

Kar, G. ^{[2
]}

Reed, Robert A. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[2] imec, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 04期

关键词：

Logic gates; Dielectrics; Radiation effects; Hysteresis; Thin film transistors; Annealing; Temperature measurement; Indium gallium zinc oxide; thin-film transistors (TFTs); total ionizing dose (TID); LOW-FREQUENCY NOISE; BORDER TRAPS; INGAAS FINFETS; RADIATION RESPONSE; OXIDE; BIAS; DEGRADATION; DEPENDENCE; INTERFACE; MOSFETS;

D O I：

10.1109/TNS.2023.3346825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-ionizing-dose (TID) effects are evaluated in top-gated IGZO thin-film transistors (TFTs) irradiated with different gate biases. Negative-bias irradiation leads to worst case degradation of TID response, primarily due to enhanced charge trapping in the SiO2 insulator that underlies the IGZO channel and serves as an oxygen-penetration layer during device processing. TID response comparisons with back-gated devices indicate that hydrogen also plays an important role in the observed degradation of top-gated devices. The source of this hydrogen is most likely SiN oxygen blocking layers. Comparisons with other display and alternative-channel MOS technologies illustrate that further optimization should enable the use of IGZO in future space applications.

引用

页码：461 / 468

页数：8

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