Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures

被引：4

作者：

Kim, Kyung-Ho ^{[1
,2
]}

Park, Youn Ho ^{[1
,3
]}

Koo, Hyun Cheol ^{[1
]}

Chang, Joonyeon ^{[1
]}

Kim, Young Keun ^{[2
]}

Kim, Hyung-jun ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Rashba Effect; Spin-Orbit Coupling; Quantum Well; Spin-Field Effect Transistor; CHANNEL; FIELD;

D O I：

10.1166/jnn.2014.8464

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (alpha) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of alpha in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of alpha directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

引用

页码：5212 / 5215

页数：4

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