High Q-Factor Low Band SAW Filter based on high performance POI substrate

被引：0

作者：

Seah, Xavier ^{[1
]}

Ballandras, Sylvain ^{[2
]}

Courjon, Emilie ^{[2
]}

Bernard, Florent ^{[2
]}

Clairet, Alexandre ^{[2
]}

Makdissy, Tony ^{[2
]}

Laroche, Thierry ^{[2
]}

Aspar, Gabrielle ^{[2
]}

Michoulier, Eric ^{[2
]}

Ndiaye, Saly ^{[2
]}

Raveski, Alexandre ^{[2
]}

Chappaz, Cedrick ^{[3
]}

Hilt, Thierry ^{[3
]}

Alami-Idrissi, Aziz ^{[3
]}

Achatz, Philipp ^{[3
]}

Rolland, Laure ^{[3
]}

Didier, Christophe ^{[3
]}

Allibert, Frederic ^{[3
]}

Drouin, Alexis ^{[3
]}

Huyet, Isabelle ^{[3
]}

机构：

[1] Soitec Microelect Singapore Pte Ltd, Business Dev, Singapore, Singapore

[2] SOITEC SA, Filter Design & Manuf Grp, Besancon, France

[3] SOITEC SA, Filter Business Unit Innovat, Bernin, France

来源：

2024 IEEE MTT-S INTERNATIONAL CONFERENCE ON MICROWAVE ACOUSTICS & MECHANICS, IC-MAM | 2024年

关键词：

Surface Acoustic Waves; SAW; Piezoelectric-on-Insulator; POI; Figures-of-Merit; sub-GHz; characterization;

D O I：

10.1109/IC-MAM60575.2024.10538490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Piezoelectric-on-Insulator wafers based on the combination of single-crystal piezoelectric, oxide and Silicon represent a unique solution to address 5G and next generation 6G surface acoustic wave filter challenges. This paper is particularly discussing the use of POI for sub-GHz applications. The stack is adapted to provide optimal SAW properties required to meet the corresponding signal processing specifications. Figures of Merit are reported for different configurations, demonstrating the performance of the approach and the actual capability of SAW-on-POI to provide high quality filters for frequency bands ranging from 500 MHz to 1.0 GHz.

引用

页码：125 / 128

页数：4

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