Preparation and Tribological Performance of Multi-Layer van der Waals Heterostructure WS2/h-BN

被引:0
|
作者
Fang, Yunqi [1 ]
Sun, Yang [1 ,2 ]
Shang, Fengqin [1 ]
Zhang, Jing [1 ]
Yao, Jiayu [1 ]
Yan, Zihan [1 ]
Shen, Hangyan [1 ]
机构
[1] China Jiliang Univ, Coll Mat & Chem, Hangzhou 310018, Peoples R China
[2] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300354, Peoples R China
关键词
van der Waals heterostructure; WS2/h-BN; electrostatic interaction; layer-by-layer self-assembly; tribological property;
D O I
10.3390/lubricants12050163
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Van der Waals heterostructures with incommensurate contact interfaces show excellent tribological performance, which provides solutions for the development of new solid lubricants. In this paper, a facile electrostatic layer-by-layer self-assembly (LBL) technique was proposed to prepare multi-layer van der Waals heterostructures tungsten disulfide/hexagonal boron nitride (vdWH WS2/h-BN). The h-BN and WS2 were modified with poly (diallyldimethylammonium chloride) (PDDA) and sodium dodecyl benzene sulfonate (SDBS) to obtain the positively charged PDDA@h-BN and the negatively charged SDBS@WS2, respectively. When the mass ratio of PDDA to h-BN and SDBS to WS2 were both 1:1 and the pH was 3, the zeta potential of PDDA@h-BN and SDBS@WS2 were 60.0 mV and -50.1 mV, respectively. Under the electrostatic interaction, the PDDA@h-BN and SDBS@WS2 attracted each other and stacked alternately along the (002) crystal plane forming the multi-layer (four-layer) vdWH WS2/h-BN. The addition of the multi-layer vdWH WS2/h-BN (1.0 wt%) to the base oil resulted in a significant reduction of 33.8% in the friction coefficient (0.104) and 16.8% in the wear rate (4.43 x 10(-5) mm(3)/(N<middle dot>m)). The excellent tribological property of the multi-layer vdWH WS2/h-BN arose from the lattice mismatch (26.0%), a 15-fold higher interlayer slip possibility, and the formation of transfer film at the contact interface. This study provided an easily accessible method for the multi-layer vdWH with excellent tribological properties.
引用
收藏
页数:15
相关论文
共 50 条
  • [31] Influences of Electric Field and Strain on Electronic Structures of Arsenene/WS2 van der Waals Heterostructure
    Li W.
    Dai X.
    Zhang F.
    Zhang, Fang (zhangfang2003@163.com), 1600, Chinese Ceramic Society (48): : 499 - 506
  • [32] Q-switching of waveguide lasers based on graphene/WS2 van der Waals heterostructure
    Li, Ziqi
    Cheng, Chen
    Dong, Ningning
    Romero, Carolina
    Lu, Qingming
    Wang, Jun
    Vazquez de Aldana, Javier Rodriguez
    Tan, Yang
    Chen, Feng
    PHOTONICS RESEARCH, 2017, 5 (05) : 406 - 410
  • [33] Near-Unity Light Absorption in a Monolayer WS2 Van der Waals Heterostructure Cavity
    Epstein, Itai
    Terres, Bernat
    Chaves, Andre J.
    Pusapati, Varun-Varma
    Rhodes, Daniel A.
    Frank, Bettina
    Zimmermann, Valentin
    Qin, Ying
    Watanabe, Kenji
    Taniguchi, Takashi
    Giessen, Harald
    Tongay, Sefaattin
    Hone, James C.
    Peres, Nuno M. R.
    Koppens, Frank H. L.
    NANO LETTERS, 2020, 20 (05) : 3545 - 3552
  • [34] Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure
    Li, Wei
    Wang, Tianxing
    Dai, Xianqi
    Wang, Xiaolong
    Zhai, Caiyun
    Ma, Yaqiang
    Chang, Shanshan
    Tang, Yanan
    SOLID STATE COMMUNICATIONS, 2017, 250 : 9 - 13
  • [35] Optoelectronic Properties of a van der Waals WS2 Monolayer/2D Perovskite Vertical Heterostructure
    Wang, Qixing
    Zhang, Qi
    Luo, Xin
    Wang, Junyong
    Zhu, Rui
    Liang, Qijie
    Zhang, Lei
    Yong, Justin Zhou
    Wong, Calvin Pei Yu
    Eda, Goki
    Smet, Jurgen H.
    Wee, Andrew T. S.
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (40) : 45235 - 45242
  • [36] Optoelectronic properties and strain regulation of the 2D WS2/ZnO van der Waals heterostructure
    Guan, Yujun
    Yao, Hui
    Zhan, Huahan
    Wang, Hao
    Zhou, Yinghui
    Kang, Junyong
    RSC ADVANCES, 2021, 11 (23) : 14085 - 14092
  • [37] Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures
    Zhao, S. Y. Frank
    Elbaz, Giselle A.
    Bediako, D. Kwabena
    Yu, Cyndia
    Efetov, Dmitri K.
    Guo, Yinsheng
    Ravichandran, Jayakanth
    Min, Kyung-Ah
    Hong, Suklyun
    Taniguchi, Takashi
    Watanabe, Kenji
    Brus, Louis E.
    Roy, Xavier
    Kim, Philip
    NANO LETTERS, 2018, 18 (01) : 460 - 466
  • [38] Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode
    Sanni Kapatel
    C. K. Sumesh
    Pratik Pataniya
    G. K. Solanki
    K. D. Patel
    The European Physical Journal Plus, 132
  • [39] Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2
    Huan, Changmeng
    Wang, Pu
    Liu, Bingtao
    He, Binghan
    Cai, Yongqing
    Ke, Qingqing
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (30) : 10995 - 11004
  • [40] Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode
    Kapatel, Sanni
    Sumesh, C. K.
    Pataniya, Pratik
    Solanki, G. K.
    Patel, K. D.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2017, 132 (04):