Ultra Wideband Dual-Output Thin Film Lithium Niobate Intensity Modulator

被引:0
|
作者
Zhu, Xiaofeng [1 ]
de Freitas, Marco Moller [1 ]
Shi, Shouyuan [1 ]
Mercante, Andrew [2 ]
Yao, Peng [2 ]
Wang, Fuquan [2 ]
Shopp, Benjamin A. [2 ]
Cullen, Christopher J. [1 ]
Prather, Dennis W. [1 ]
机构
[1] Univ Delaware, Elect & Comp Engn Dept, Newark, DE 19716 USA
[2] Phase Sensit Innovat Inc, Newark, DE 19713 USA
关键词
Optical waveguides; Electrodes; Radio frequency; Optical buffering; Modulation; Indexes; Optical modulation; LNOI; dual-output MZM; microwave photonic link; MACH-ZEHNDER MODULATORS; ELECTROOPTIC MODULATOR; SILICON-NITRIDE; HIGH-SPEED; PERFORMANCE;
D O I
10.1109/JSTQE.2024.3388324
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design, optimization, fabrica-tion, and characterization of a dual-output, wideband, thin-filmlithium niobate Mach-Zehnder Modulator (TFLN-MZM). Thedevice is designed with ridge etched waveguides for operation ata 1.55 mu m wavelength. The dual-output is achieved using a 2x2multi-mode interference (MMI) splitter with an extinction ratio(ER) of over 40 dB. The measured DC half-wave voltage (V-pi)is 1.02 V. To achieve wideband operation, segmented electrodesare optimized to provide both wideband index matching and lowloss. Accordingly, the measured 3 dB bandwidth is 95 GHz and theradio-frequency (RF) electrode loss is 0.24 dB/(cm<middle dot>GHz(1/2)). Themotivation for this device is in balanced microwave photonic links(MPLs) for Radio-Frequency-over-Fiber (RFoF) applications
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页数:13
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