Wideband thin-film lithium niobate modulator with low half-wave-voltage length product

被引:0
|
作者
刘学成 [1 ]
熊兵 [1 ]
孙长征 [1 ]
王健 [1 ]
郝智彪 [1 ]
汪莱 [1 ]
韩彦军 [1 ]
李洪涛 [1 ]
余佳东 [1 ]
罗毅 [1 ]
机构
[1] Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University
基金
中国博士后科学基金; 中国国家自然科学基金; 国家重点研发计划;
关键词
lithium niobate; electro-optic modulator; wideband; half-wave voltage;
D O I
暂无
中图分类号
TB383.2 []; TN761 [调制技术与调制器]; TQ131.11 [];
学科分类号
070205 ; 080501 ; 080902 ; 0817 ; 1406 ;
摘要
A novel thin-film lithium niobate(TFLN) electro-optic modulator is proposed and demonstrated. Li Nb O-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 μm, resulting in a low halfwave-voltage length product of only 1.7 V·cm. Capacitively loaded traveling-wave electrodes are employed to reduce the microwave loss, while a quartz substrate is used in place of a silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave voltage of 3.4 V and a merely less than 2 d B roll-off in an electro-optic response up to 67 GHz.
引用
收藏
页码:85 / 90
页数:6
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