Synthesis and luminescent properties of highly thermally stable GdGa3(BO3)4 :Cr3+ broadband near-infrared phosphors for near-infrared LED applications

被引:0
|
作者
Shao, Shanzhu [1 ]
Hu, Xiantao [1 ]
Liu, Dequan [2 ]
Jin, Fanjia [1 ]
Peng, Ying [1 ]
Wang, Jinxin [1 ]
Lian, Shixun [1 ]
Zhou, Wenli [1 ]
机构
[1] Hunan Normal Univ, Key Lab Light Energy Convers Mat Hunan Prov Coll, Key Lab Chem Biol & Tradit Chinese Med Res, Minist Educ China, Changsha 410081, Peoples R China
[2] Hunan Pusisat Opto Technol Co LTD, Hefei, Peoples R China
关键词
Near-infrared phosphors; NIR LED; Broadband emission; Thermal stability; GdGa3(BO3)(4) :Cr3+; EFFICIENT; SPECTROSCOPY; EMISSION; SPECTRA; ENERGY; IONS;
D O I
10.1016/j.ceramint.2024.05.372
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Developing near-infrared (NIR) phosphors with high thermal stability and broadband emission is pivotal for advancing NIR light sources. In this study, we synthesized a novel borate phosphor, GdGa3(BO3)(4):Cr3+, via a high-temperature solid-state reaction. This phosphor demonstrates exceptional thermal stability, maintaining 94 % of its initial intensity even at 150 degrees C. Upon blue light excitation, it emits a broad spectrum from 650 to 1100 nm, peaking at 770 nm with a full width at half maximum (FWHM) of similar to 130 nm. We conducted a comprehensive investigation to understand the mechanisms underlying its thermal stability. Additionally, by combining the GdGa3(BO3)(4):15%Cr3+ phosphor with a commercial blue light chip, we fabricated an NIR LED device achieving a NIR output power of 6.45 mW and a photoelectric conversion efficiency of 1.57 % at 120 mA. This study offers valuable insights into the design of advanced NIR phosphors with superior thermal stability for NIR light source applications.
引用
收藏
页码:30723 / 30729
页数:7
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