Luminescence Properties of Broadband Near-Infrared δ-Sc4Zr3O12: Cr3+ Phosphors

被引:1
|
作者
Fang Limin [1 ,2 ]
Hao Zhendong [1 ]
Zhang Liangliang [1 ]
Wu Hao [1 ]
Wu Huajun [1 ]
Zhang Jiahua [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130022, Jilin, Peoples R China
[2] Univ Chinese Acad Sci, Sch Optoelect, Beijing 100037, Peoples R China
关键词
materials; fluorescent and luminescent materials; Sc4Zr3O12: Cr3+ phosphors; high temperature solid state method; broadband near-infrared phosphor;
D O I
10.3788/LOP202158.1516008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Near-infrared phosphor conversion light-emitting diode (NIR pc-LED) is a new type of near infrared solid-state light source for detection; recently, core material broadband near-infrared phosphors have received enormous attention. Herein, the broadband near-infrared delta-Sc4Zr3O12: Cr3+ phosphor was prepared by a high-temperature solid-state method. Under the excitation of blue light, the near infrared emission position is 810 nm and the FWHM of emission peak is approximately 175 nm. The broadband emission corresponds to the overlap of two emission peaks, and the positions of the two emission subpeaks correspond to 795 nm and 873 nm, respectively, which is reflected in the results of luminescence decay and temperature-dependent emission spectrum. The crystal field strength is estimated to be 2. 25 determined using spectral data. Finally, the application of the prepared broadband near infrared delta-Sc4Zr3O12: Cr3+ phosphors in NIR pc-LED was explored.
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页数:8
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