Germanium and Tin Precursors for Chalcogenide Materials Containing N-Alkoxy Thioamide Ligands

被引：0
|
作者：
Choi, Heenang [1 ,2 ]
Song, Young Eun [1 ,3 ]
Park, Dongseong [1 ]
Park, Chanwoo [1 ]
Park, Bo Keun [1 ,3 ]
Son, Seung Uk [2 ]
Lim, Jongsun [1 ]
Chung, Taek-Mo [1 ,3 ]
机构：
[1] Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Daejeon 34114, South Korea
[2] Sungkyunkwan Univ SKKU, Dept Chem, Suwon 16419, Gyeonggi Do, South Korea
[3] Univ Sci & Technol UST, Dept Chem Convergence Mat, Daejeon 34113, South Korea
来源：
ACS OMEGA | 2024年 / 9卷 / 26期
关键词：
SINGLE-SOURCE PRECURSORS; ATOMIC LAYER DEPOSITION; SULFIDE THIN-FILMS; SNS; PERFORMANCE; SN(II); TEMPERATURE; NANOSHEETS; MONOLAYER; CHEMISTRY;
D O I：
10.1021/acsomega.4c03019
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This study describes the synthesis of germanium and tin complexes Ge(mdpaS)(2) (1), Ge(edpaS)(2) (2), Ge(bdpaS)(2) (3), Ge(empaS)(2) (4), Sn(mdpaS)(2) (5), Sn(edpaS)(2) (6), Sn(bdpaS)(2) (7), and Sn(empaS)(2) (8) (mdpaSH = (Z)-N-methoxy-2,2-dimethylpropanimidothioic acid; edpaSH = (Z)-N-ethoxy-2,2-dimethylpropanimidothioic acid; bdpaSH = (Z)-N-(tert-butoxy)-2,2-dimethylpropanimidothioic acid; empaSH = (Z)-N-ethoxy-2-methylpropanimidothioic acid), using newly designed N-alkoxy thioamide ligands as precursors for metal chalcogenide materials. All complexes were characterized using various analytical techniques, and the single-crystal structures of complexes 5 and 7 revealed a distorted seesaw geometry in the monomeric SnL2 form. Thermogravimetric (TG) curves showed differences between Ge compounds, which exhibited single-step weight losses, and Sn compounds, which exhibited multistep weight losses. As a result, we suggest that the synthesized complexes 1-8 are potential precursors for group IV metal chalcogenide materials.
引用
收藏
页码：28707 / 28714
页数：8
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